Microwave phase shifter having an active layer under the phase shifting line and power amplifier using such a phase shifter
US6965269B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 6, 2003 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Aug 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/184
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A phase shifter according to this invention includes a circuit board having a semi-insulating layer. An active layer is formed in a transmission line forming portion on one surface side of the semi-insulating layer, a first ground conductive layer is formed on the other surface side, a transmission line is formed on the upper side of the active layer, and a second ground conductive layer is formed on the transmission line forming surface of the semi-insulating layer in close proximity to one side of the transmission line. If a bias voltage of negative polarity is applied to the transmission line, reverse bias is applied to the active layer to form a depletion layer and capacitance is equivalently connected to the transmission line having inductance. A phase shift amount can be freely controlled by changing the value of the capacitance according to the bias voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.