FBAR, FBAR based duplexer device and manufacturing method thereof
US6965281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2004 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Jan 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a film bulk acoustic resonator (FBAR), an FBAR based duplexer device, and a manufacturing method thereof, which a plurality of sacrificial layer units are formed on a substrate wafer so as to be spaced apart from one another at regular distances, and device functional portions are formed on the sacrificial layer units, respectively. The device functional portions have a piezoelectric layer unit and a plurality of electrodes. Then, side wall and roof of protective formed by the use of dry film. After hardening the dry film, the wafer is cut into a plurality of the wafer sections so as to contain the device functional portions, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.