Process for creating Metal-Insulator-Metal devices
US6967118B2 · kind B2 · utility
5Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2004 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Mar 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create an electrical with the dielectric which a contact is provided, and transferring the MIM device to a substrate by adhesive transfer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.