Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof
US6967360B2 · kind B2 · utility
2Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Jul 14, 2003 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Aug 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310, a GaAs buffer layer 321 that is formed on the semi-insulating GaAs substrate 310, AlGaAs buffer layer 322, a channel layer 323, a spacer layer 324, a carrier supply layer 325, a spacer layer 326, a Schottky layer 327 composed of an undoped In0.48Ga0.52P material, and an n+-type GaAs cap layer 328. A gate electrode 330 is formed on the Schottky layer 327, and is composed of LaB6 and has a Schottky contact with the Schottky layer 327, and ohmic electrodes 340 are formed on the n+-type GaAs cap layer 328.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.