Method and apparatus for chemical and mechanical polishing
US6969308B2 · kind B2 · utility
34Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 2003 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | May 14, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A polishing device is hermetically accommodated in a chamber containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device is altered into the composition different from the ambient air, and voltage is applied between a wafer and a polishing pad to polish the wafer with an electrolytic effect. The polishing device has the atmosphere containing extremely less oxygen, preventing a surface of the wafer from oxidation and thereby providing a constant polishing rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.