Method and device for growing large-volume oriented monocrystals

US6969502B2 · kind B2 · utility

Assignee

• Schott Glas · DE

Inventors

• Gunther Wehrhan · Jena, DE
• Peter Elzner · Lorch, DE
• Ewald Moersen · Mainz, DE
• Richard Schatter · Eppstein, DE
• Hans-Joerg Axmann · Jena, DE
• Thorsten Reichardt · Stadtroda, DE

Key dates

• Filing date: Mar 2, 2001
• Grant date: Nov 29, 2005
• Expiry date: May 19, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/10
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In the method for growing large-volume monocrystals crystal raw material is heated in a melting vessel with heating elements to a temperature above its melting point until a melt is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering the temperature at least to the crystallization point. A solid/liquid phase boundary is formed between the monocrystal and the melt. The monocrystal grows towards the melt surface in a direction that is perpendicular to the phase boundary. A vertical axial temperature gradient is produced and maintained between the bottom of the melting vessel and its upper opening and heat inflow and/or heat outflow through side walls of the melting vessel is prevented, so that the solid/liquid phase boundary has a curvature radius of at least one meter. A crystal-growing device for performing this process is also described.