Solid state image sensor
US6969879B2 · kind B2 · utility
3Cited by
5References
35Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 21, 2003 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | Aug 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/772
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An active pixel image sensor is formed on a P-type epitaxial layer on a P-type substrate. An active pixel array is in the P-type epitaxial layer. Each pixel includes an N-well functioning as a collection node, and a P-well adjacent the N-well. The P-well includes only NMOS transistors functioning as active elements. The in-pixel transistors cooperate with off-pixel PMOS transistors to form A-D converters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.