Method for co-fabricating strained and relaxed crystalline and poly-crystalline structures
US6972245B2 · kind B2 · utility
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6References
13Claims
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Key dates
| Filing date | May 15, 2003 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Dec 20, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention provides a system for co-fabricating strained and relaxed crystalline, poly-crystalline, and amorphous structures in an integrated circuit device using common fabrication steps. The system operates by first receiving a substrate. The system then fabricates multiple layers on this substrate. A layer within these multiple layers includes both strained structures and relaxed structures. These strained structures and relaxed structures are fabricated simultaneously using common fabrication steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.