Metal etch process selective to metallic insulating materials
US6972265B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 15, 2002 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Dec 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided which includes patterning one or more metal layers arranged above a metal insulating layer and terminating the patterning process upon exposure of the metal insulating layer. In particular, the method may be adapted to be more selective to the metal insulating layer than the one or more metal layers. In general, such an adaptation may include exposing the semiconductor topography to an etch chemistry comprising hydrogen bromide. In some cases, the etch chemistry may further include a fluorinated hydrocarbon. In yet other embodiments, the method may further or alternatively include using a reactive ion etch process, etching at a relatively low temperature, using a resist mask, and/or using an etch chemistry substantially absent of an oxygen plasma. In this manner, the method may, in some embodiments, include patterning the one or more metal layers using a reactive ion etch process substantially absent of an oxygen plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.