Dual metal Schottky diode
US6972470B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Mar 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.