Compositions for microlithography
US6974657B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2001 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Oct 16, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fluorine-containing polymer prepared from at least a spacer group selected from the group consisting of ethylene, alpha-olefins, 1,1′-disubstituted olefins, vinyl alcohols, vinyl ethers, and 1,3-dienes; and a norbornyl radical containing a functional group containing the structure: —C(Rf)(Rf′)Orb wherein Rf and Rf′ are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is an integer ranging from 2 to about 10 and Rb is a hydrogen atom or an acid- or base-labile protecting group; r is an integer ranging from 0-4. The fluorine-containing polymer has an absorption coefficient of less than 4.0 mm−1 at a wavelength of 157 nm. These polymers are useful in photoresist compositions for microlithography. They exhibit high transparency at this short wavelength and also possess other key properties, including good plasma etch resistance and adhesive properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.