Patent · US Expired

Method of producing a light-emitting diode

US6974758B2 · kind B2 · utility

8Cited by

9References

17Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Michael Kelly · Queen Creek, US
Oliver Ambacher · Neufahrn, DE
Martin Stutzmann · Erding, DE
Martin Brandt · Schömberg, DE
Roman Dimitrov · San Jose, US
Robert Handschuh · Burgkirchen an der Alz, DE

Key dates

Filing date	Sep 29, 2003
Grant date	Dec 13, 2005
Priority date	—
Expiry date	Jan 3, 2024

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/977
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.