CMOS image sensor permitting increased light sensitivity from amplification of pixel detection signals
US6974944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2003 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Sep 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/51
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor, includes: a plurality of pixel circuits, each of which comprises a photoelectric conversion element, a first transistor controlled by a detection signal generated by the photoelectric conversion element, and a second transistor connected to the first transistor and controlled by a select line; and a common amplifier circuit, which is provided commonly to the plurality of pixel circuits, and which has a third transistor connected in parallel to the first transistor, and a current circuit for supplying current to the first and third transistors, wherein an amplifying circuit, which amplifies the detection signal, is formed by the first transistor in a pixel circuit selected by the select line, and by the third transistor in th common amplifier circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.