Gating grid and method of making same
US6977381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2003 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Feb 23, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A gating grid for deflecting ions includes an insulating substrate (16), a conducting layer (28) adhered to the insulating substrate (16), and interdigitated electrodes (14) patterned in the conducting layer by a photolithographic process. A hole (18) in the insulating substrate beneath the interdigitated electrodes allows ions to pass through the hole in the substrate. A process for making a gating grid for deflecting ions includes adhering a conducting layer (28) to an insulating substrate (16), forming interdigitated electrodes (14) on the conducting layer (28), and then forming a hole (18) in the insulating substrate beneath the interdigitated electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.