Patent · US Expired

Electrically pumped semiconductor active region with a backward diode, for enhancing optical signals

US6977424B1 · kind B1 · utility

2Cited by

1References

25Claims

0Family size

Assignee

FINISAR CORPORATION · US

Inventors

Jeffrey D. Walker · Corona, US
Daniel Francis · Los Altos, US
Peter W. Evans · Tracy, US
Paul Liu · Oakland, US

Key dates

Filing date	Mar 18, 2003
Grant date	Dec 20, 2005
Priority date	—
Expiry date	May 19, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/2205
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An electrically pumped optical device includes a semiconductor active region and a backward diode. Both of these structures are located in the current path of the optical device, which is oriented primarily vertically. The active region has a finite extent along at least one lateral dimension. The overall structure improves the electrical performance of the device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.