Semiconductor device having a lateral MOSFET and combined IC using the same
US6977425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2003 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | May 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.