Method and apparatus for characterizing shared contacts in high-density SRAM cell design
US6977512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2003 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Feb 14, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/41
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Test structures are provided for accurately quantifying shared contact resistance. The test structures are built based upon an actual memory cell, which is self-aligning to allow shared contact chains through an array of test cells. A main array of test cells is built to provide a chain of shared contact resistance. Using the main array of test cells, a resistance in the shared contact chain may be measured. Supplemental arrays of test cells is built to provide a chain of poly side resistance, a chain of island side resistance, a chain of island connection line resistance, and a chain of poly connection resistance. A tester measures resistance using the test structures and uses the values to accurately determine shared contact resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.