Horizontal access semiconductor photo detector
US6978067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2001 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Jun 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A horizontal access semiconductor photo detector (2) comprises a horizontal light absorbing layer (8) for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion (18) and a second light confining portion (20, 21) arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.