Method and apparatus for transferring a thin layer of semiconductor material
US6979630B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 2003 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Aug 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and apparatus for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separation layer is formed inside a donor wafer by trapping hydrogen into a preformed, buried defect-rich layer preferably obtained by implanting a low dose of light ions through a protective layer deeply into this donor wafer. The donor wafer is then bonded to a second wafer and then split at the separation layer using a splicing apparatus. The invention also provides a “Wide Area Ion Source” (WAIS) that performs both implants in a very cost effective manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.