Carbon and halogen doped silicate glass dielectric layer and method for fabricating the same
US6979656B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2003 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Mar 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a dielectric layer provides for use of a carbon source material separate from a halogen source material when forming a carbon and halogen doped silicate glass dielectric layer. The use of separate carbon and halogen source materials provides enhanced process latitude when forming the carbon and halogen doped silicate glass dielectric layer. Such a carbon and halogen doped silicate glass dielectric layer having a dielectric constant greater than about 3.0 is particularly useful as an intrinsic planarizing stop layer within a damascene method. A bilayer dielectric layer construction comprising a carbon and halogen doped silicate glass and a carbon doped silicate glass dielectric layer absent halogen doping is useful within a dual damascene method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.