Patent · US Expired

Process for efficient light extraction from light emitting chips

US6980710B2 · kind B2 · utility

8Cited by
4References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 10, 2003
Grant dateDec 27, 2005
Priority date
Expiry dateJan 7, 2024

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B6/43
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present invention claims a unique way to pattern an optical microstructure immediately on top of a mass produced light-emitting device, such as a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or a photo detector, for the purpose of efficient coupling of light to or from the active region of the light-emitting device. The invention addresses the need to effectively and efficiently extract light from the light-emitting optoelectronic device. Finally, the invention allows for the optical microstructure to be deposited and patterned directly over the light-emitting device contained on a suitable substrate, such as a wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.