Method of transferring devices by lateral etching of a sacrificial layer
US6982209B2 · kind B2 · utility
9Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2003 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | Jan 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68368
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.