Method of producing a semiconductor-metal contact through a dielectric layer

US6982218B2 · kind B2 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Ralf Preu · Glückstadt, DE
• Eric Schneiderlöchner · Glückstadt, DE
• Stefan Glunz · Glückstadt, DE
• Ralf Lüdeman · Glückstadt, DE

Key dates

• Filing date: Aug 30, 2001
• Grant date: Jan 3, 2006
• Expiry date: Sep 24, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of electrically contacting a semiconductor layer (13) coated with at least one dielectic layer (12) which is coated with a metal layer the metal layer (11) is applied on the dielectric layer (12) and the metal layer (11) is temporarily locally heated in a line, linear or dotted pattern by means of a source of radiation (9) in a controlled manner in such a way that a local molten mixture, is formed consisting exclusively of the metal layer (11), the dielectric layer (12) and the semiconductor layer (13) are located directly underneath the metal layer (11) and upon solidification, leads to an electrical contact between the semiconductor layer (13) and the metal layer (11).