Nonvolatile magnetic memory device and manufacturing method thereof
US6982446B2 · kind B2 · utility
5Cited by
3References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 31, 2003 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | Dec 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An TMR-type MRAM comprising a transistor for selection; a first connecting hole; a first wiring (write-in word line); a second insulating interlayer covering a first insulating interlayer and the first wiring; a TRM device formed on the second insulating interlayer; a second wiring (bit line) formed on a third insulating interlayer; and a second connecting hole formed through the second insulating interlayer and connected to the first connecting hole, in which an end face of an extending portion of the other end of the TRM device is in contact with the second connecting hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.