Near hermetic packaging of gallium arsenide semiconductor devices and manufacturing method therefor
US6982480B2 · kind B2 · utility
7Cited by
9References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | Jul 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16152
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A near-hermetic microwave semiconductor device, suitable for wideband high frequency applications including Phased Array Antenna systems, includes a PWB as a substrate; a GaAs Monolithic Microwave Integrated Circuit (MMIC) disposed on the substrate; a silicon carbide sealant disposed on the MMIC; and a Backside Interconnect with solder attachment which connects the substrate to the silicon carbide-coated MMIC. A conformal coating is disposed on the sealant, and a cover is disposed on the conformally-coated MMIC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.