Deposition method of insulating layers having low dielectric constant of semiconductor devices
US6984594B2 · kind B2 · utility
1Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2002 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Apr 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.