CMOS-type photodetector for improved charge transfer from the photodetector to a MOS transistor
US6984817B2 · kind B2 · utility
1Cited by
48References
29Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 9, 2002 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Aug 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
Abstract
A photodetector formed in an active area of a semiconductor substrate of a first conductivity type, including a MOS transistor and a photodiode formed of the junction between the substrate and a region of a second conductivity type also forming the source of the MOS transistor, a heavily-doped layer of the first conductivity type covering the source region and a portion of the substrate, said portion of the substrate being delimited by an opening of the source region extending in a centered manner from the side of the source region opposite to the channel region of the transistor, towards this channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.