Silicon nanoparticle field effect transistor and transistor memory device
US6984842B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2000 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Feb 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6893
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.