Thin film transistor with buffer layer for promoting electron mobility
US6984848B2 · kind B2 · utility
4Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Jan 7, 2004 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Jan 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.