Semiconductor laser and method for manufacturing the same
US6985504B2 · kind B2 · utility
3Cited by
3References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 18, 2003 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Aug 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.