Method and composition to improve a nitride/oxide wet etching selectivity
US6987064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2002 |
| Grant date | Jan 17, 2006 |
| Priority date | — |
| Expiry date | Feb 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for wet etching a metal nitride containing layer overlying a silicon oxide containing layer in a semiconductor device or micro-electro-mechanical device manufacturing process including providing a substrate including a silicon oxide containing layer and an overlying exposed metal nitride containing layer; providing a wet etching solution including phosphoric acid and water; adding a silicon containing compound which undergoes a hydrolysis reaction in the wet etching solution; and, contacting the exposed metal nitride containing layer with the wet etching solution for a period of time to remove the metal nitride containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.