High-voltage lateral transistor with a multi-layered extended drain structure
US6987299B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2004 |
| Grant date | Jan 17, 2006 |
| Priority date | — |
| Expiry date | Jul 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from field plate members by one or more dielectric layers. The layered structure may be fabricated in a variety of orientations. A MOSFET structure may be incorporated into the device adjacent to the source region, or, alternatively, the MOSFET structure may be omitted to produce a high-voltage transistor structure having a stand-alone drift region. It is emphaized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims 37 CFR 1.72(b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.