Adhering layers to metals with dielectric adhesive layers
US6989579B2 · kind B2 · utility
1Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Oct 16, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12197
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II–VI and III–V semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.