Switchable capacitance and nonvolatile memory device using the same
US6990008B2 · kind B2 · utility
6Cited by
5References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 10, 2004 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Nov 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G7/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device (2) with a switchable capacitance comprises a first and a second electrode (12, 20) facing each other, a dielectric layer (14) between a first and a second capacitor electrode (12, 20), and a switching member (18) between the second electrode (20) and the dielectric layer (14), the switching member (18) comprising a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the lower conductivity state and the higher conductivity state being persistent, wherein the capacitance of the device (2) depends on the conductivity state of the switching material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.