Surface emitting semiconductor laser and manufacturing method thereof
US6990128B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 27, 2001 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Mar 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser.Five holes are formed on the top surface of an upper multilayer reflection film formed in the shape of a post by the use of a focused ion beam (FIB) processing unit. One hole is formed on the surface of an upper multilayer reflection film corresponding to the center position of a square current injection region which is about 8 μm square and the remaining four holes are formed at the corners of the square current injection region, for example, at the positions about 2 μm square away from the one hole to produce four light emitting spots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.