Semiconductor optical device and method of manufacturing the same
US6990131B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2002 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Sep 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3072
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure. The electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the second crystallographic orientation which is formed in the process of growing the semi-insulating semiconductor crystal is substantially equal to or higher than the electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the first crystallographic orientation wherein the second crystallographic orientation is different from the first crystallographic orientation. An integrated light source and a method …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.