Distributed bragg reflector for optoelectronic device

US6990135B2 · kind B2 · utility

Assignee

• FINISAR CORPORATION · US

Inventors

• Ralph H. Johnson · Plano, US
• Klein L. Johnson · Windom, US
• Jimmy A. Tatum · Plano, US
• James K. Guenter · Garland, US
• James R. Biard · Richardson, US
• Robert Hawthorne · Garland, US

Key dates

• Filing date: Oct 28, 2002
• Grant date: Jan 24, 2006
• Expiry date: May 17, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3211
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device. To alleviate this, the present invention contemplates providing an implant, etch or other suitable process to reduce or eliminate one or more electrical artifacts associated with the junction between the oxidized portion and un…