Method for error correction decoding in an MRAM device (historical erasures)
US6990622B2 · kind B2 · utility
17Cited by
20References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2002 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Nov 14, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/1008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive solid-state storage device (MRAM) employs error correction coding (ECC) to form ECC encoded stored data. ECC encoded data is read and decoded to identify failed symbols. A failure history table is then updated to indicate columns 14 of an array of storage cells 16 which are suspected to be affected by physical failures. Advantageously, erasure information is formed with reference to the failure history table, and the ability of a decoder 22 to perform ECC decoding is substantially enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.