Methods for forming silicon dioxide layers on substrates using atomic layer deposition
US6992019B2 · kind B2 · utility
40Cited by
10References
36Claims
0Family size
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Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Aug 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.