Semiconductor photodetector with internal reflector
US6992276B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2003 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Mar 21, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photodetector comprises a semiconductor substrate with entrance and reflecting faces formed at the substrate upper surface. The reflecting face forms an acute angle with the substrate surface and is positioned so that an optical beam transmitted through the entrance face into the substrate is internally reflected from the reflecting face toward the substrate upper surface. A photodetector active region is formed on the substrate upper surface and is positioned so that the reflected optical beam impinges on the active region. The photodetector may be mounted on a second substrate for receiving an optical beam from a planar waveguide formed on the second substrate or an optical fiber mounted in a groove on the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.