MBE grown alkali antimonide photocathodes
US6992441B2 · kind B2 · utility
1Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Sep 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J40/06
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A photocathode manufacturing intermediary article (24) includes a substrate layer (26), and an active layer (20) that is carried by the substrate layer (26). The active layer (20) includes photoemissive alkali antimonide material that is epitaxially grown on the substrate (26).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.