Gate drive method and apparatus for reducing losses in the switching of MOSFETs
US6992520B1 · kind B1 · utility
Inventor
Key dates
| Filing date | Jan 12, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Jan 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Usually, in power converters, the load on a MOSFET is inductive, and the current cannot change rapidly. The drain current is the upper limit of the Miller current, so that if the gate current is larger than the drain current, the gate capacitance will continue to discharge and there can be no Miller shelf. If a parallel capacitor is used with a MOSFET, once the drain voltage starts to rise, the load current divides, placing a new lower limit on the Miller current. To drive a MOSFET with a gate current that exceeds the drain current, the circuit impedances have to be very low, suggesting a new geometry and packaging arrangement for the MOSFET and gate drive. A compatible gate turn of circuit is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.