Thin film transistor and method of forming thin film transistor
US6995045B2 · kind B2 · utility
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3References
16Claims
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Key dates
| Filing date | Mar 5, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Mar 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
Abstract
The thin film transistor has a non-transparent structure besides and insulated with the gate. Hence, the light transmitted from the substrate is blocked and the light current induced in the thin film transistor is negligible. The method uses a mask with a slit pattern to form a non-uniform photoresist. Hence, the mask could be used to pattern two conductor layers for forming source/drain/channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.