Near field optical probe having an internal near field generating and detecting device, and manufacturing method thereof
US6995350B2 · kind B2 · utility
1Cited by
3References
13Claims
0Family size
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Key dates
| Filing date | Dec 2, 2002 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Dec 2, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y35/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.