Silicon-on-insulator latch-up pulse-radiation detector
US6995376B2 · kind B2 · utility
10Cited by
8References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 1, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jul 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the gate layer includes a PN gate. Latch-up occurs in the radiation detector only in response to incident radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.