Heterostructures for III-nitride light emitting devices
US6995389B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jun 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34346
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer and quantum well layer in the active region of a light emitting device. In some embodiments, the reservoir layer is thicker than the barrier layer and quantum well layer, and has a greater indium composition than the barrier layer and a smaller indium composition than the quantum well layer. In some embodiments, the reservoir layer is graded. In a second embodiment, the active region of a light emitting device is a superlattice of alternating quantum well layers and barrier layers. In some embodiments, the barrier layers are thin such that charge carriers can tunnel between quantum well layers through a barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.