Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device
US6995406B2 · kind B2 · utility
62Cited by
6References
14Claims
0Family size
Inventors
Key dates
| Filing date | Jun 6, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jun 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.