Module for high voltage power for converting a base of IGBT components
US6995409B2 · kind B2 · utility
5Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2004 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jun 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This power switching cell comprises: Each intermediate bond (52, 70) as well as the faces of the components linked to this intermediate bond are entirely incorporated inside said substrate, and the faces not linked to an intermediate bond (52, 70) of the components situated at the ends of said chain (2) are disposed in such a way as to be separated from one another by way of the dielectric material forming said substrate (22). This substrate is formed of a stack of parallel sheets (24–27) of dielectric material, and each of the components (4–6) following in said chain is incorporated in the thickness of a different sheet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.