Semiconductor device and method of fabricating the same
US6995434B2 · kind B2 · utility
4Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Sep 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device capable of suppressing increase of the capacitance while suppressing a thin-line effect of a silicide film is obtained. This semiconductor device comprises a first silicon layer formed on a semiconductor substrate through a gate insulator film with an upper portion and a lower portion larger in width than a central portion for serving as a gate electrode and a first silicide film formed on the first silicon layer for serving as the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.