Semiconductor optical integrated device having a light emitting portion, a modulation section and a separation portion
US6995454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jan 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical integrated device 1 comprises a light-emitting element portion 110, modulation element portion 120, and separation portion 130 on a substrate 2. Light-emitting element portion 110 comprises a semiconductor laser element portion, and modulation element portion 120 comprises a modulation element portion. Separation portion 130 is formed between light-emitting element portion 110 and modulation element portion 120. In separation portion 130, a semiconductor embedded portion 80e is provided in a second clad layer 8m. Whereas second clad layer 8m consists of p-type InP, semiconductor embedded portion 80e consists of n-type InP. Hence semiconductor embedded portion 80e has the effect of impeding the leakage current flowing between electrodes 90a and 90b. As a result, the leakage current occurring between electrodes 90a and 90b via second clad layer 8m is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.